| 摘要 |
<p>PURPOSE:To generate high voltage statically by coupling not less than two voltage generating elements composed of ferroelectric film in series. CONSTITUTION:A static boosting circuit has voltage generating elements coupled in not less than two in series composed of ferroelectric film, in which voltage VG1 is applied to a clock pulse voltage circuit between supply voltage VDD and earth voltage Vss and voltage VF1 to VF2 is generated. After that, when gate voltage VG2 is applied to a MOS type FET between the voltage elements for an open condition, high voltage Vout is generated between the earth voltage Vss.</p> |
