发明名称 High penetration deposition process and apparatus
摘要 A method and apparatus for deep penetration deposition of material in a porous substrate utilizes a pressure differential across the substrate to effect penetration of arc-produced vapor from one chamber through the body. The one chamber can be held at a pressure of 10-2 to 10-3 torr while the other chamber is at a pressure of 10-5 to 10-6 torr.
申请公布号 US4942844(A) 申请公布日期 1990.07.24
申请号 US19890446928 申请日期 1989.12.06
申请人 VAPOR TECHNOLOGIES INC. 发明人 PINKHASOV, EDUARD
分类号 C23C14/04;C23C14/32 主分类号 C23C14/04
代理机构 代理人
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