| 摘要 |
<p>PURPOSE:To prevent the side wall parts of diodes from being overetched and contaminated and to suppress the generation of a malfunction by subjecting the semiconductor layer in the active parts of the diodes to final patterning after the end of patterning of a transparent conductive layer, metallic layer and wiring metallic layer. CONSTITUTION:The semiconductor layer of the active parts of the diodes where the active parts of the diodes come into contact with a part of a light shielding metallic layer from the semiconductor layer are patterned after the patterning of the semiconductor layer, metallic layer and wiring metallic layer among the transparent conductive layer, semiconductor layer, metallic layer, and wiring metallic layer laminated on a transparent insulating substrate ends at the time of forming the active parts of the diodes having the constitution in which the semiconductor layer comes into contact with transparent electrodes via the light shielding metallic layer on the substrate side and come into contact with wiring electrodes on the counter substrate side on the transparent insulating substrate. The damages and contaminations which the side walls of the semiconductor layer receive are removed at the time of the final patterning and since the effect of shielding the diagonal incident light to the semiconductor layer of the transparent insulating substrate, the malfunction is prevented.</p> |
