| 摘要 |
PURPOSE:To improve high speed operation insuring stable operation at an MOS device using polycrystalline Si for a gate electrode and wirings by a method wherein radiant energy rays are irradiated to a part of polycrystalline Si at the wiring parts to reduce resistivity. CONSTITUTION:At the MOS device, polycrystalline silicon doped with phosphorus is used for the gate electrode 1, the gate wiring and the drain wiring. The radiant energy rays of laser rays, intense heat rays, charged corpuscle rays, etc., are irradiated to the polycrystalline silicon wirings 2 using a mask to make the limit of solid solubility of impurities to rise, and to enlarge crystal grain size of polycrystalline silicon. Accordingly resistivity of the wiring parts can be reduced particularly, and high speed operation can be attained. |
