首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
SILICON PHOTO DIODE WITH LOW SENSITIVITY WITH PIN STRUCTURE
摘要
申请公布号
KR1019900005127(B1)
申请公布日期
1990.07.19
申请号
KR1019870006725
申请日期
1987.06.30
申请人
发明人
分类号
主分类号
代理机构
代理人
主权项
地址
您可能感兴趣的专利
New Cosmetic Compositions
Improvements in and relating to Transistors.
Filament Wound Tank
Oscillateur à torsion pour pièce d'horlogerie
Montre-calendrier
EXPANSIBLE LINKAGE
Ferrosilicon with improved handling properties
Penicillin and cephalosporin derivs
Hypotensive coronary dilatory imidazo (1,2-c) quinazo - lines
Alpha-aldimino penicillins
Carbon silicon oxide phosphoric acid (-salt) coating for - hot foundry moulds
Leather footbal with rubber cover retains shape plays - better and keeps water out
METHOD FOR FORMING ELECTRODE IN SEMICONDUCTOR DEVICES
AUTOMATIC CHROMA CONTROL CIRCUIT
PROTECTIVE ENCLOSURE FOR THE JUNCTION BETWEEN A BURIED UTILITY CABLE AND AN UNDERGROUND SERVICE LEAD AND METHOD OF MAKING THE SAME
INSULATED ELECTRICAL CONDUCTOR AND PROCESS OF PREPARATION THEREOF
MEASUREMENT OF ELECTRICAL ENERGY BY STATISTICAL COINCIDENCE METHOD
RESPIRATION MONITOR
INVERTER SYMMETRY CORRECTION CIRCUIT
PREDICTIVE CODING OF SPEECH SIGNALS