| 摘要 |
A high voltage P-N diode includes a P- substrate with a thin N- epitaxial layer thereon. An N+ cathode region extends into the N- epitaxial layer from the upper surface thereof. A P+ anode region extends into the N- epitaxial layer from its upper surface and surrounds the N+ cathode region. An N+ buried layer is situated between the P- substrate and the N- epitaxial layer, beneath the P+ anode region, and surrounds the N+ cathode region, as viewed from above. A further P+ region extends into the N- epitaxial layer from its upper surface and surrounds the N+ cathode region, and, in turn, is surrounded by the P+ anode region. In an exemplary embodiment, a MOSFET is included to alternately connect the further P+ region to the P- substrate and to open circuit the further P+ region. With the further P + region open circuited, the P-N diode has a low on-resistance when it operates in its current-conducting state. An embodiment structurally similar to the P-N diode comprises a bipolar transistor having an N+ emitter region extending into a P+ base region, which corresponds to the P+ anode region of the diode.
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