| 摘要 |
A process for forming a crystalline deposited film on a substrate in a film forming space comprising (a) preparing the surface of the substrate by selectively irradiating the surface with an energy beam of an electromagnetic wave or an electron beam through an atmosphere of a gas to provide regions on which crystal nuclei are selectively formed, (b) forming the crystalline deposited film on the substrate surface by separately introducing an activated species (A) formed by decomposition of a compound (SX) containing silicon and a halogen and an activated species (B) formed from a chemical substance (B) for film formation, the activated species (B) being chemically mutually reactive with the activated species (A), the two activated species forming a mixture to effect a chemical reaction therebetween and thereby effecting the formation of the crystalline deposited film, and (c) exposing the crystalline deposited film surface to a gaseous substance (E) capable of effecting an etching action thereon and thereby effecting crystal growth in a specific face direction.
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