发明名称 PREPARATION OF BODY WHEREIN SILICON CARBIDE IS USED AS BASE MATERIAL
摘要 A method of producing a silicon carbide-based body by infiltrating with molten silicon a porous compact comprising silicon carbide, carbon, and a secondary phase dispersed within the compact. The secondary phase might comprise a titanium compound, or a metal carbide.
申请公布号 JPH02180757(A) 申请公布日期 1990.07.13
申请号 JP19890292126 申请日期 1989.11.09
申请人 UK ATOMIC ENERGY AUTHORITY 发明人 IAN HIGINSU;ANDORIYUU BAKUSENDEIRU
分类号 C04B35/565;C04B35/573;C04B41/85 主分类号 C04B35/565
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