发明名称 |
PREPARATION OF BODY WHEREIN SILICON CARBIDE IS USED AS BASE MATERIAL |
摘要 |
A method of producing a silicon carbide-based body by infiltrating with molten silicon a porous compact comprising silicon carbide, carbon, and a secondary phase dispersed within the compact. The secondary phase might comprise a titanium compound, or a metal carbide. |
申请公布号 |
JPH02180757(A) |
申请公布日期 |
1990.07.13 |
申请号 |
JP19890292126 |
申请日期 |
1989.11.09 |
申请人 |
UK ATOMIC ENERGY AUTHORITY |
发明人 |
IAN HIGINSU;ANDORIYUU BAKUSENDEIRU |
分类号 |
C04B35/565;C04B35/573;C04B41/85 |
主分类号 |
C04B35/565 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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