| 摘要 |
PURPOSE:To enable to control independently thicknesses and the growth speeds of respective liquid phase growth layers by a method wherein the load of a solute is reduced as to be saturated at a temperature comparatively near to a growth temperature to check the increase of the degree of supersaturation at the lower part of a molten liquid even in a time period not coming in contact with a substrate. CONSTITUTION:According to the usual liquid phase growth method, thermal diffusion and density diffusion are generated according to the temperature difference at a molten liquid (a molten liquid coming in contact with a slider) in a time period not coming in contact with a substrate to increase the supersaturation quantity at the lower part of the molten liquid, and growth is advanced at a large growth speed. Accordingly, initial crystallizability is inferior, and at multilayer growth, crystallizability of an interface is inferior. When an epitaxial layer is provided on a semiconductor crystal from the molted liquid by setting at least the load of the solute to the solvent of the molten liquid to be used at the initial period of growth as to be saturated at the temperature higher by about 2.5-3.5 deg.C than the growth temperature, precise control of crystallizability and thickness of the growth layer can be attained, and extremely effective for manufacture of a high-performance element according to the multilayer construction of thin growth layers. |
