| 摘要 |
PURPOSE:To prevent an auto-doping from a base layer subjected to doping to an I-type amorphous silicon semiconductor layer by a method wherein before the I-type layer of a photoelectric conversion layer is formed, the P-type or N-type surface of the base layer is performed a plasma treatment with inert gas. CONSTITUTION:An N-type crystallite silicon layer 3n is formed and thereafter, the surface of the layer 3n is performed a plasma treatment in an atmosphere containing inert gas, such as argon gas, helium gas and the like, subsequently, an I-type amorphous silicon semiconductor layer 3i and a P-type crystallite silicon layer 3p are formed. In such a way, by performing a plasma treatment on the surface of the layer 3n, a surface adsorption, which is generated at the time of formation of the layer 3n, and doping atoms of phosphorus existing excessively in the vicinity of the surface of the layer 3n can be removed and an auto-doping from the layer 3n to the layer 3i is prevented. |
