| 摘要 |
PURPOSE:To enable a light emitting diode of this design to emit light rays of short wavelength efficiently and stably by a method wherein a hetero-junction between a crystal selected from a specified group and a p-type silicon carbide(SiC) crystal is provided. CONSTITUTION:A light emitting diode is provided with a hetero-junction between a crystal selected from a group composed of an n-type gallium nitride(GaN) crystal, an n-type aluminum nitride(AlN) crystal, and an n-type gallium aluminum nitride (GaxAl1-xN:0<x<1) crystal and a p-type silicon carbide(SiC) crystal. Generally, distortion, stress, and various kinds of lattice defects occur to a hetero-junction between different substances, because the substances are different from each other in lattice constant, but in this case, as a hetero-junction is formed between SiC and GaN, AlN, or GaxAl1-xN whose lattice constant is very close to that of SiC, a light emitting diode of this design is able to emit light rays of short wavelength efficiently. |
