发明名称 |
A semiconductor laser device. |
摘要 |
<p>A semiconductor laser device is disclosed which comprises a semiconductor substrate (1) and a multi-layered crystal structure disposed on the substrate (1), the multi-layered crystal structure containing a first cladding layer (3), a quantum-well active layer (5) for laser oscillation, and a second cladding layer (7) with a striped ridge portion (12) for current injection, wherein the difference in the effective refractive index between the region underneath the striped ridge portion (12) and the adjacent regions thereto is greater in the vicinity of at least one of the facets than inside of the facets.</p> |
申请公布号 |
EP0376753(A2) |
申请公布日期 |
1990.07.04 |
申请号 |
EP19890313704 |
申请日期 |
1989.12.29 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
SUYAMA, TAKAHIRO;KONDO, MASAFUMI;SASAKI, KAZUAKI;HOSODA MASAHIRO;TAKAHASHI, KOSEI A210 EXCEL HEIGHTS TSURUMMAI;HAYAKAWA, TOSHIRO |
分类号 |
H01S5/10;H01S5/22;H01S5/343 |
主分类号 |
H01S5/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|