| 摘要 |
PURPOSE:To facilitate highly accurate alignment by a method wherein, after an insulating film is formed so as to cover an alignment mark, the insulating film is etched and at least the upper part of the alignment mark is exposed and, at the same time, the surface of the insulating film except the alignment mark part is levelled. CONSTITUTION:After an insulating film 12 is formed so as to cover an alignment mark 11, the insulating film 12 is etched and at least the upper part of the alignment mark 11 is exposed and, at the same time, the surface of the insulating film 12 except the alignment mark 11 part is levelled. If a pattern forming film 14 made of opaque material is formed on the insulating film 12 having the levelled surface, a step is formed in the film 14 by the alignment mark 11. Therefore, at the time of alignment in a photolithography process for forming a pattern, the alignment mark 11 can be detected with the step. With this constitution, highly accurate alignment with the pattern can be achieved. |
