发明名称 CHARGING AND EQUALIZING CIRCUIT FOR SEMICONDUCTOR MEMORY DEVICE
摘要 A number of memory cells (20) are connected with bit line pairs. A circuit for charging and equalizing bit line pairs includes a pMOS transistor (13) for parallelly connecting with bit line pairs equalizing signal at read and write operation, first nMOS transistors (14,15) applied with the power supply voltage at gates, second nMOS transistors (16,17), and pMOS transistors (11,12) receiving the equalization pulse from a address transition detector and turns on the second nMOS transistros at read operation. The first/second nMOS transistors and pMOS transistors (11,12) are serially connected with bit line pairs.
申请公布号 KR900004635(B1) 申请公布日期 1990.06.30
申请号 KR19870006581 申请日期 1987.06.27
申请人 SAM SUNG GTE - TELECOMMUNICATION CO., LTD. 发明人 KIM BYUNG-YUN;CHUNG TAE-SUNG;HWANG SANG-KI
分类号 G11C11/41;G11C11/40;G11C11/419;(IPC1-7):G11C11/40 主分类号 G11C11/41
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