发明名称 PROCESS FOR PRODUCING SINGLE CRYSTAL
摘要 <p>The invention relates to a process for producing single crystal by solidification from a melt, which comprises using a triple-structure crucible constituted of an outer cylinder made of a high-melting metal or alloy having a melting point of 1500°C or above, an inner cylinder made of one or more of a high-melting ceramic material and a carbonaceous material such as graphite, pyrolytic graphite or vitreous carbon, and an intermediate cylinder made of quartz glass, placing the inner cylinder holding the starting material in the intermediate cylinder to effect hermetical sealing, inserting the intermediate cylinder into the outer cylinder, welding the outer cylinder to effect sealing, and heating the crucible to melt the starting material and cause crystal growth.</p>
申请公布号 WO1990007021(P1) 申请公布日期 1990.06.28
申请号 JP1989001248 申请日期 1989.12.13
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