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发明名称
INTEGRIERTE MOS-TRANSISTOREN ENTHALTENDE SCHALTUNG MIT EINER AUS EINEM METALL ODER METALLSILIZID DER ELEMENTE TANTAL ODER NIOB BESTEHENDEN GATEMETALLISIERUNG SOWIE VERFAHREN ZUR HERSTELLUNG DIESER GATEMETALLISIERUNG.
摘要
申请公布号
DE3671572(D1)
申请公布日期
1990.06.28
申请号
DE19863671572
申请日期
1986.06.30
申请人
SIEMENS AG, 1000 BERLIN UND 8000 MUENCHEN, DE
发明人
HIEBER, DR., KONRAD, D-8214 BERNAU, DE;NEPPL, DR., FRANZ, D-8000 MUENCHEN 90, DE
分类号
H01L21/28;H01L21/285;(IPC1-7):H01L21/28;H01L29/62
主分类号
H01L21/28
代理机构
代理人
主权项
地址
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