发明名称 SEMICONDUCTOR CIRCUIT
摘要 PURPOSE:To obtain a device with the buffer circuit of low power consumption in spite of the use of high supply voltage by connecting a normally-on type FET to a buffer stage constituted of a normally-off type FET, and making it load. CONSTITUTION:When input is OFF, and the normally-off type FET Tr2 of a switch stage is OFF, a source follower normally-off type FET Tr3 to constitute the buffer stage through the normally-on type FET Tr1 connected to the high supply voltage VDD together with the normally-off type FET Tr4 is turned ON. At that time, the normally-on type Tr5 whose drain is short-circuited to its gate is connected to the FET Tr3 as the load, and the output of the buffer stage connected to the high supply voltage VDD becomes low potential. Accordingly, even if the high supply voltage is used together with an ECL circuit, etc., the device becomes the semiconductor device which uses mainly the normally-off type FET and is provided with the buffer of the low power consumption.
申请公布号 JPH02166828(A) 申请公布日期 1990.06.27
申请号 JP19880321829 申请日期 1988.12.20
申请人 SUMITOMO ELECTRIC IND LTD 发明人 MATSUMOTO KAZUYA
分类号 H01L27/095;H03K17/687;H03K19/00;H03K19/0185;H03K19/0952 主分类号 H01L27/095
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