| 摘要 |
PURPOSE:To uniformly form a thin grown layer and to obtain an epitaxial film of a satisfactory surface state by forming semiconductor epitaxial layers on four faces of a compound semiconductor crystal of a prism. CONSTITUTION:A manufacturing apparatus of a light emitting diode film has a plurality of PBN or quartz crucibles 5 disposed in a quartz or stainless steel reaction tube 6, and sequentially filled, for example, with Ga melted liquid 2 containing Al0.7Ga0.3As, Ga melted liquid 3 containing Al0.3Ga0.7As, and melted liquid 4 having similar composition to the liquid 2, and held in melted liquid by heating. H2 gas is introduced into the reaction tube 6. A plurality of GaAs crystalline substrate materials 1 each having 1mm of bottom area and 50mm of length of a prism are secured in a holder 7, sequentially dipped in the Ga melted liquids 2, 3, 4 containing AlxGa1-xAs of oversaturated state, and three layers of AlxGa1-xAs thin film crystals are grown. As a result, the thin grown films may be formed uniformly. When the GaAs crystal of the prism is dipped in the Ga melted liquid containing the AlxGa1-xAs to grow AlxGa1-xGa and then pulled up from the melted liquid, the melted liquid is easily separated. Accordingly, an epitaxial layer of satisfactory surface state can be obtained. |
