| 摘要 |
PURPOSE:To enhance photosensitivity and surface potential and to reduce residual potential by forming layer regions containing a specified amount of element of group IIIa and Va, respectively, in the inside of an a-SiC photoconductive layer. CONSTITUTION:The amorphous silicon carbide (a-SiC) photoconductive layer 2 has a layer structure formed by successively laminating a first layer region 2a containing an element of group Va of the periodic table in an amount of 0 - 5,000ppm, a second layer region 2b containing an element of group IIIa of the periodic table in an amount of 0 - 200ppm, and a third layer region containing an element of group IIIa of the periodic table in an amount of 1 - 1,000ppm, and each thickness of the layer regions 2a, 2b, 2c is set in the range of 0.01 - 3mum, thus permitting the obtained electrophotographic sensitive body to be enhanced in photosensitivity and surface potential and reduced in residual potential. |
