发明名称 |
Method for producing alloy of low thermal expansion |
摘要 |
In production of alloy for lead frames used in semiconductor integration circuits, a Fe-base alloy of a specified composition is annealed at a temperature above its recrystallization point and, thereafter, worked at 13 to 40% degree of working in order to subject the resultant elongation by thermal expansion close to those of Si, SiC and Si3N4 over wide range of temperature.
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申请公布号 |
US4936925(A) |
申请公布日期 |
1990.06.26 |
申请号 |
US19890389169 |
申请日期 |
1989.08.03 |
申请人 |
YAMAHA CORPORATION |
发明人 |
WATANABE, TUYUKI;OOHASHI, TOSHIYUKI |
分类号 |
C21D8/00;C22C38/00;C22C38/10 |
主分类号 |
C21D8/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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