发明名称 MOUNTING METHOD FOR SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To enhance mounting density by projecting an energy beam onto the surface of an insulating resin layer between outer electrodes where interconnections are provided between semiconductor elements, and forming wiring conductors. CONSTITUTION:An insulating resin layer 13 is formed on the surfaces of a semiconductor element 11 and a substrate 12 other than an outer electrode part 14 as unitary body, a energy beam 16 is projected on the surface of the insulating resin layer 13 between outer electrodes where interconnections are provided. Thus wiring conductors 17 are formed. When the energy beam 13 is projected onto the insulating resin layer 13, a part which is shocked with the energy beam is denatured. Thus a highly conductive denatured carbon wiring pattern can be formed. Since it is not necessary to form leads, mounting density can be enhanced.
申请公布号 JPH02165662(A) 申请公布日期 1990.06.26
申请号 JP19880321557 申请日期 1988.12.20
申请人 DAINIPPON PRINTING CO LTD 发明人 SAGARA HIDEJI
分类号 H05K3/28;H01L23/538;H01L25/04;H01L25/18;H05K3/10 主分类号 H05K3/28
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