PCT No. PCT/JP88/00320 Sec. 371 Date Jan. 27, 1989 Sec. 102(e) Date Jan. 27, 1989 PCT Filed Mar. 30, 1988.The present invention relates to a strain sensor, particularly a strain sensor which detects a mechanical strain using the electric resistance change of a non-single crystalline semiconductor which is proportional to mechanical strain. The strain sensor in the present invention consists of a non-single crystalline semiconductor containing Si wherein the activation energy determined from the temperature dependency of the dark conductivity is under 15 meV. The strain sensor particularly suits an application to a mechanical strain measurement under a comparatively strong magnetic field.
