| 摘要 |
PURPOSE:To prevent generation of a warp or a slip line of silicon wafer at manufacture of semiconductor device by a method wherein quantity of precipitation of oxygen between lattices to be generated up to time of completion of heat treatment at the temperature of 950 deg.C or more is held at 0.8X10<18>/cm<-3> or less, and concentration of oxygen after completion is held at 0.7X10<18>/cm<-3> or more. CONSTITUTION:At manufacture of semiconductor to perform intrinsic gettering forming the denuded zone and an internal crystal defect in the silicon wafer, quantity of precipitation of oxygen between the lattices to be generated from non-treated condition of the silicon wafer up to time of completion of heat treatment at the high temperature of 950 deg.C or more in the semiconductor manufacturing process is made to 0.8X10<18>/cm<-3> or less. Concentration of oxygen between the lattices after completion of high temperature heat treatment is made to 0.7X10<18>/cm<-3> or more. The upper limit of precipitation quantity and the lower limit of oxygen concentration thereof prevent generation of a warp and moreover prevent generation of a slip line in the silicon wafer to be generated by excess growth of internal crystal defects. |
