| 摘要 |
PURPOSE:To form a mask for X-ray lithography that the position slippage of a mask pattern is small by using one material as a material for a membrane film and an X-ray mask pattern. CONSTITUTION:A mask pattern 1 and a membrane film 2 are all constituted of the same material. First, a material film 4 to become a membrane film 2 and a mask pattern 1 is accumulated on the upper face of a mask substrate 3. At the same time, a film 5 to become a mask when etching the substrate is also accumulated at the rear of the substrate 3. By using a vapor growth method such as CVD method, etc., the films 4 and 5 can be accumulated at the same time in the same thickness with the same film, and the internal stress can be restrained to extremely small. Furthermore, by usual lithography process and etching process, the mask pattern 1 is formed into projection at the upper face of the material film 4. And leaving only the frame part of the substrate, the film 5 is opened, and with this as the mask the substrate 3 below a membrane window area at the rear is selectively etched and completed. Hereby, the misalignment of a mask pattern resulting from the stress of the film can be removed. |
