| 摘要 |
PURPOSE:To obtain the liquid crystal element which has a stable memory characteristic at the time of multiplex driving and has a good contrast by depositing inorg. matter, such as SiO, by diagonal evaporation on electrodes, subjecting the same to a uniaxial orientation treatment and injecting a ferroelectric liquid crystal, then further applying an AC electric field to the element to change the orientation state. CONSTITUTION:The SiO is deposited by diagonal evaporation on the surfaces of substrates 1 which are sputtered with, for example, indium tin oxide ITO, as the transparent electrodes 2. The resulted substrates are assembled via a spacer 4 to attain about 2mum cell thickness. The liquid crystal material 5 is injected between these substrates. The AC electric field of 15 Hertz and 25V is thereafter applied to this element to uniform the orientation of the liquid crystal. The liquid crystal element which has the stable memory characteristic at the time of multiplex driving and has the good contrast is obtd. in this way. |
