发明名称 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
摘要 <p>PURPOSE:To secure the rise-up of a suitable high voltage in response to a load, and improve the reliability of operation of an apparatus by determining the time constant regulating the rise-up of a high voltage according to the value of a load to be connected with a high voltage outputting means. CONSTITUTION:A high voltage outputting means is provided, which outputs a high voltage to be applied at the time of writing and erasing information. Based on a load to be connected with the high voltage outputting means, the time constant is determined. As a result, the stable rise-up of a high voltage can be secured in spite of change of the load. For example, at the time of collective erasing mode, a rising-up potential becomes larger only at the point of a capacitor C6, and the time necessary to reach said potential becomes long. As the result, the period of 0V of a signal from a differential circuit, which period corresponds with the transient period of a signal S, C, becomes long, and effective erasing is enabled even in the case of collective erasing.</p>
申请公布号 JPH02156565(A) 申请公布日期 1990.06.15
申请号 JP19880312414 申请日期 1988.12.08
申请人 MITSUBISHI ELECTRIC CORP 发明人 KOBAYASHI SHINICHI;NOGUCHI KENJI;TOYAMA TAKESHI
分类号 G11C17/00;G11C16/06;H01L21/822;H01L21/8247;H01L27/04;H01L27/115;H01L29/788;H01L29/792 主分类号 G11C17/00
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