| 摘要 |
PURPOSE:To relax an inclination of a protective insulating film, to enhance a strength against a thermal shock and to make this device highly reliable by a method wherein an overlap of a metal conductor with an insulating is eliminated and a difference in level is reduced. CONSTITUTION:A silicon oxide film 2 is formed on a semiconductor substrate 1; the whole surface of the film 2 is covered with an insulating film 3; an opening part is formed in the film 3; an etching operation is executed so as to leave aluminum in the opening part only; a lower-layer metal conductor 4 is formed. Then, an insulating film is formed again; it is used as an interlayer insulating film 5; after that, an opening part is formed in the film 5 on the lower-layer aluminum 4; aluminum is sputtered on the whole surface and is patterned to be a prescribed shape of an upper-layer metal conductor; thereby, the lowerlayer conductor 4 and the upper-layer conductor 6 are connected through the opening part. In addition, a protective insulating film 7 is formed on the whole surface by using an insulating film; a prescribed opening part is formed.
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