| 摘要 |
PURPOSE:To obtain a level conversion circuit possible for high circuit integration by inserting a diode between a base of a bipolar transistor (TR) of a level shift circuit taking a connection point between an n-channel TR and a 1st resistor as its input and a ground level so as to ensure a minimum level of an input voltage of the level shift circuit. CONSTITUTION:A diode D1 is inserted between a collector of a bipolar TR Q1 of a level shift circuit 20 and a ground level and a current switch is constituted through the series connection of a resistor R1 and an n-channel TR 3. When an output of the inverter circuit 10 is at a high level, the n-channel Tr 3 is turned on, a current flows through the resistor R1 and the n-channel TR 3 and the base potential of the bipolar TR Q1 is at a low level. Thus, a CMOS- ECL level conversion with less number of components and possible for high circuit integration is obtained. |
