| 摘要 |
For preventing a semiconductor device from separation of a passivation film, there is disclosed a process of wire bonding comprising the steps of: (a) preparing an intermediate structure of a semiconductor device; (b) forming an inter-level insulating layer of an organic material on the intermediate structure; (c) forming at least one bonding pad on the inter-level insulating layer; (d) growing a passivation film of an inorganic material on the inter-level insulating film in a high temperature ambient, the passivation film exposing the bonding pad; and (e) connecting a bonding wire to the bonding pad at a temperature lower than that of the high temperature ambient.
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