发明名称 |
Planarizing ladder-type silsesquioxane polymer insulation layer. |
摘要 |
<p>An improved insulation layer is formed by first preparing a solution by reacting water with an aminoalkoxysilane monomer in a solvent, using a critical mole ratio of water/monomer. After a sufficient aging period, the solution is coated onto a suitable surface, e.g. the surface of a semiconductor device, and then cured, in an essentially oxygen-free atmosphere, to a ladder-type silsesquioxane polymer. The insulation layer demonstrates excellent planarizing characteristics, while also exhibiting enhanced crack-resistance.</p> |
申请公布号 |
EP0371287(A1) |
申请公布日期 |
1990.06.06 |
申请号 |
EP19890120664 |
申请日期 |
1989.11.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CLODGO, DONNA J.;PREVITI-KELLY, ROSEMARY A.;UTTECHT, RONALD R.;WALTON, ERICK G. |
分类号 |
H01B3/46;C08G77/06;C08G77/26;C08G77/28;C09D183/04;H01L21/312;H01L23/29 |
主分类号 |
H01B3/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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