Method of forming a thin silicon layer on an insulator.

摘要

A method of forming a thin silicon layer on an insulating layer (30) by forming a thin layer of heteroepitaxial silicon (20) on a first substrate (10) other than silicon having a lattice structure which matches that of silicon. A first insulating layer is formed on the heteroepitaxial layer of silicon. A second insulating layer is formed on the surface of a second silicon substrate. The first and second insulating layers are bonded together to form a unified structure, and the first substrate is etched away, thereby obviating the etch back problems of existing techniques using homoepitaxial silicon on silicon substrates.