| 摘要 |
<p>PURPOSE:To secure Roff which is equivalent to an insulating material as amorphous silicon and utilize effect of reduction in Ron due to inclusion of impurities ion by forming a semiconductor element constituting an antifuse in four-layer structure of a lower-part electrode, amorphous silicon, a silicon insulation film, and an upper-part electrode. CONSTITUTION:A semiconductor which allows the area between one electrode 104 and the other electrode 106 to change from high-resistance state to low- resistance state by applying voltage between the electrodes 104 and 106 formed on the surface of a semiconductor substrate 101 for making a current flow is in four-layer structure consisting of the upper-part electrode 106, an amorphous silicon 105, a silicon oxide insulation film 107, and a lower-part electrode 102. For example, the impurities diffusion layer 102 is formed at the Si semiconductor device 101 and an interlayer insulation film 103 is formed over the entire surface, and then a contact hole 108 is formed. Then, SiO2 is accumulated by 100Angstrom or less and the amorphous silicon 105 is formed on it for patterning. Then, an interlayer insulation film 103a is accumulated over the entire surface and contact holes 108a and 109 are formed, and then the wiring electrode 104 and the upper-part electrode 106 are formed.</p> |
