METHOD OF PRODUCING POLYCRYSTALLINE SI FILM OF LARGE GRAIN SIZE HAVING ORIENTED CRYSTALLOGRAPHIC AXIS ON INSULATOR SUBSTRATE,申请号JP19880297855-传众专利搜索

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发明名称	METHOD OF PRODUCING POLYCRYSTALLINE SI FILM OF LARGE GRAIN SIZE HAVING ORIENTED CRYSTALLOGRAPHIC AXIS ON INSULATOR SUBSTRATE
摘要
申请公布号	JPH02143416(A)	申请公布日期	1990.06.01
申请号	JP19880297855	申请日期	1988.11.24
申请人	HASEGAWA SEIICHI	发明人	HASEGAWA SEIICHI
分类号	H01L21/20;H01L21/324;H01L29/78;H01L29/786	主分类号	H01L21/20
代理机构		代理人
主权项
地址

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