RESIST PATTERN FORMING METHOD

摘要

PURPOSE:To obtain a resist pattern having a rectangular cross-section by forming a resist layer with a silicon-contg. resist contg. silicon-contg. resin having phenol or cresol as the skeleton and diazoketones and treating the resist layer with alkali. CONSTITUTION:The surface of a first resist layer 12 is coated with a positive type polysiloxane-based resist and this resist is baked to form a second resist layer 13. The polysiloxane-based resist consists essentially of silicon-contg. resin having phenol as the skeleton and diazoketones such as naphthoquinonediazidosulfonic ester as a sensitizer. The second resist layer 13 is then treated with alkali to form a slightly soluble layer in the surface of the layer 13 and the layer 13 is patterned by exposure with g-rays and development. The cross-section of the resulting pattern is rectangular because the layer 13 has the slightly soluble layer.