发明名称 Semiconductor memory device having a small number of signal lines
摘要 A digital signal is converted to an analog signal by an analog voltage generator. The analog signal is transferred via at least one analog signal line, to a digital voltage generator in which the analog signal transferred via the analog signal line is converted into a digital signal. In this way, the digital signal is converted to an analog signal at the input section of the semiconductor device, the converted analog signal is transferred to the digital signal generator through an analog signal line, and is converted back to a digital signal. Therefore, the number of wirings of the signal lines can be decreased, and hence the wiring occupying area on the semiconductor chip can be reduced.
申请公布号 US4929945(A) 申请公布日期 1990.05.29
申请号 US19880171104 申请日期 1988.03.21
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KUSHIYAMA, NATSUKI
分类号 G11C11/418;G11C7/16;G11C8/00;G11C8/06;G11C8/10;G11C8/18;G11C11/408;G11C11/413;H01L27/10 主分类号 G11C11/418
代理机构 代理人
主权项
地址