| 摘要 |
PURPOSE:To acquire a high quality hetero interface by carrying out a process to attaching hydrogen atom or halogen atom to a first single crystal layer consisting of a semiconductor or metal silicide and a process to perform hetero/ epitaxial growth for a second single crystal layer successively. CONSTITUTION:Halogen atom 2 such as H or F, Cl is attached onto a single crystal Si substrate 1. A second process is a process to form a hetero single crystal thin film successively thereon, and deposits amorphous GaAs, makes a substrate temperature to rise, and performs molecular beam epitaxial growth. Since the substrate temperature is high, the amorphous GaAs formed at first is single-crystallized and, simultaneously, GaAs which grows at a second time also becomes a single crystal GaAs 4. In the case of solid phase epitaxial growth method, amorphous GaAs 3 is deposited and thereafter single-crystallized only through heat treatment to become a single crystal GaAs 4. A multi layer hetero structure of GaAs and Si is formed by repeating either of these processes. That is, four layer structure of a second GaAs layer 4' / an Si layer 1' / the first layer GaAs layer 4 / the Si substrate 1 is acquired in this way.
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