| 摘要 |
PURPOSE:To improve the breakdown resistance of the gate film of a semiconductor device by connecting another terminal of a protective resistor connected to one of first and second protective diodes respectively connected to positive and negative electrodes to one of fourth and fifth protective diodes respectively connected to positive and negative electrodes. CONSTITUTION:After a terminal 10 is connected to first and second diodes 1, 2 respectively connected to positive and negative electrodes 9, 11, a fourth diode 4 connected between a resistor 7 and the electrode 9 and a fifth diode connected between the electrodes 11 are provided through the resistor 7. Accordingly, a high potential momentarily applied between the resistors 6 and 7 causes charge to pass forward, and a potential applied to the gate film of a MOSFET 12 is lowered. Thus, since the protective resistors and diodes are isolated in a multiple stage manner, the thin gate film can be protected. |
