| 摘要 |
PURPOSE:To form a good thin film by a relatively simple structure by forming a non-plasma region in a periphery of a substrate to form a thin film on the substrate. CONSTITUTION:Reaction gas is made to flow inside a vacuum chamber 1 wherein a cathode 2 and an anode 30 opposed each other are contained. The anode 30 is heated to heat a substrate 8 mounted on the annode 30 and, at the same time, high frequency power is applied between the cathode 2 and the anode 30 to discharge and decompose the above-mentioned reaction gas. A thin film is formed on the substrate 8. In such a manufacture method of a thin film through plasma CVD method, a non-plasma region is formed in a periphery of the substrate 8 to form a thin film to the substrate 8. For example, the anode 30 is made in a shape of a shallow tray by extending an outer periphery section of a planar body upward to form a side wall section 31 and to stretch an air permeable electrode member 32 which is formed in a mesh by a conductive wire material over the upper part of the side wall section 31. |
