| 摘要 |
PURPOSE:To prevent a pattern from being deformed and to enhance an accuracy by a method wherein a heavy-metal resinate layer is applied to the upper part of an X-ray absorber in a blocker region. CONSTITUTION:An SiC layer 102 and an X-ray absorber layer 1 are formed on an Si wafer 3; the Si wafer 3 is fixed to a support ring 5 by using an adhesive 8. Then, an opening 4B is formed in the Si wafer 3 by making use of the support ring 3 as a mask; the rear of the SiC layer 102 is exposed. Then, the X-ray absorber layer 1 is etched by making use of a resist pattern as a mask; original-picture patterns 1A, 1B and the like are formed in a pattern region 6. Then, the mask is coated with a heavy-metal resinate layer 9; a baking operation and a curing operation are executed. The heavy-metal resinate layer 9 in a peripheral part of the pattern region 6 is irradiated selectively with ultraviolet rays; the heavy-metal resinate layer 9 is cross-linked and polymerized; the heavy-metal resinate layer 9 is developed; the heavy-metal resinate layer, on the pattern region 6, which has not been cross-linked and polymerized is dissolved and removed. As a result, a contrast of a blocker region 7 with reference to X-rays is about 20; a field region is hardly exposed to light even when it is exposed doubly to quadruply. |
