| 摘要 |
PURPOSE:To form the semiconductor device easily by isolating P type and N type semiconductor layers, which are shaped by making an impurity element contain to polyacetylene films, by the insulator of a polyacetylene film. CONSTITUTION:The polyacetylene film 2 having high purity is grown onto a substrate 1 by using a Zeigler-Natta catalyst. A resist film 12 is patterned to the upper surface of the film 2, only a JFET element forming region is exposed, Li ions are injected from an upper section, the N type impurity layer 3 is demarcated, and the resist film 12 is dissolved and removed by an organic solvent. A resist film 13 is patterned, the Li ions of high concentration are injected, the N<+> type impurity layer is shaped, and source and drain regions 4, 5 are demarcated. A resist film 14 pattern is formed, AsF5 ions are injected, and the gate region 6 of the P<+> type impurity layer is shaped. A resist film 15 is patterned again, the surface is coated with Li through a sputtering method, and source and drain electrodes 4', 5' are molded through a lift-off method dissolving and removing the resist film 15. A resist film 16 is formed, and a gold (Au) electrode is shaped as a gate electrode 6'. |
