| 摘要 |
PURPOSE:To prevent a disconnection due to an electromigration and a stress migration and the formation of a hillock and to obtain an IC having a small contact resistance by a method wherein the electrode wiring of the IC, in which a MOSFET is formed, is formed of TiN. CONSTITUTION:Diffused layers 2, a field oxide film 3, a gate oxide film 4 and a gate electrode 5 are provided in and on the surface of an Si substrate 1 to form a MOSFET. A TiN electrode wiring 9 is led out from a TiN gate electrode 6 formed on the surfaces of the layers 2, which are used as a source and a drain of this FET, and the electrode 5 through a CVD oxide film 7 and moreover, an interlayer insulating film 8 is formed and an opening is formed in part of the film 8 to form an Al pad electrode 10. By forming the electrode wiring using TiN in such a way, a disconnection due to an electromigration and a stress migration and the formation of a hillock are eliminated and an IC having the small contact resistance of a semiconductor with the electrode wiring is obtained. |
