发明名称 |
Semiconductor wafer and epitaxial growth on the semiconductor wafer with autodoping control and manufacturing method therefor |
摘要 |
A semiconductor wafer on which silicon or the like is epitaxially grown and p-type or n-type impurities are doped and which has at the rear surface except for the peripheral edge portion thereof a blocking film for preventing jumping out of impurities therefrom which causes auto-doping, thereby preventing silicon particles from being produced at the peripheral surface and preventing the semiconductor wafer from being contaminated by the silicon particles during the manufacturing of a semiconductor device.
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申请公布号 |
US4925809(A) |
申请公布日期 |
1990.05.15 |
申请号 |
US19880214501 |
申请日期 |
1988.07.01 |
申请人 |
OSAKA TITANIUM CO., LTD.;KYUSHU ELECTRONIC METAL CO., LTD. |
发明人 |
YOSHIHARU, TETSUJIRO;KAMISE, HARUO |
分类号 |
H01L21/20;H01L21/22;H01L21/311;H01L21/314 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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