发明名称 Mim cold-cathode electron emission elements and methods of manufacture thereof.
摘要 <p>An MIM type of electron emission element having a thin insulating film (2) formed below an electron emission region (4) of a metal layer (3), with that electron emission region of the metal layer consisting of an array of thick and thin portions (3a, 3b), distributed throughout the electron emission region. Improved efficiency and uniformity of of emission are obtained, due to the low resistance of the thick portions, which effectively apply a supply voltage to the thin portions of the metal layer, while the thin portions can be made sufficiently thin to maximize the electron emission level.</p>
申请公布号 EP0367195(A2) 申请公布日期 1990.05.09
申请号 EP19890120124 申请日期 1989.10.30
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 KANEKO, AKIRA;KANNO, TORU;TOMII, KAORU
分类号 H01J1/312;H01J9/02 主分类号 H01J1/312
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