| 摘要 |
In a semiconductor memory integrated circuit comprising a semiconductor substrate with a surface trench, a thick oxide film is formed to cover the inner wall of the trench substrate except part thereof where the inner wall is exposed. A cell capacitor comprises a lower electrode, a dielectric layer and an upper electrode, the lower electrode being in contact with the exposed part of the inner wall of the trench. A cell transfer transistor is formed in the semiconductor substrate adjacent to the cell capacitor, wherein one of the diffusion layers is in contact with the lower electrode of the cell capacitor at the exposed part of the inner wall of the trench.
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