| 摘要 |
<p>PURPOSE:To eliminate the generation of a gap in the boundary between source and drain electrodes end to make it possible to form an interlayer insulating film in the same process by a method wherein, after the source and drain electrodes are formed, an insulating film is formed and a patterning is performed to form a channel protective film. CONSTITUTION:A Ti film is formed on a transparent insulative substrate 1 and a patterning is performed to form a gate electrode G and a gate bus line GB. Subsequently, a gate insulating film 2 and an operating semiconductor layer 3 are continuously formed. Source and drain electrodes S and D are formed. Subsequently, a channel protective film 4 for a channel part of a TFT is formed and an interlayer insulating film 4' is formed ok the intersection part of the gate bus line with a drain bus line. The film 4 has a configuration which covers the electrodes S and D, and a gap is never generated in the boundary between the electrodes S and D. Accordingly, there is no possibility of generating a cracking in the lower operating semiconductor layer 3 and the like and the breakdown strength, manufacturing yield and reliability of a thin film transistor matrix are improved.</p> |
