发明名称 MULTISTAGE VARIABLE CONDUCTANCE CIRCUIT, NEUROCHIP USING THE CIRCUIT, READ/WRITE METHOD FOR THE CHIP, AND SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain a multistage variable conductance circuit which has a high reliability and is easy to integrate by connecting a variable conductance element to the connection point between a multidifferential negative resistance element and a load element in a series circuit consisting of them. CONSTITUTION:An FET 2 as the variable conductance element is connected to the connection point between a multidifferential negative resistance element 1 and a load resistance 3. Then, a multistage variable conductance circuit is constituted. That is, a multilevel stabilizing circuit consists of the element 1, and the conductance of the element 2 is controlled stepwise by its output. That is, the state which the conductance of the element 2 can take is limited to several discontinuous values. Thus, the reproducibility and the set precision of the output are improved. Integration is facilitated because the number of elements is smaller.
申请公布号 JPH02113494(A) 申请公布日期 1990.04.25
申请号 JP19880263892 申请日期 1988.10.21
申请人 HITACHI LTD 发明人 TAGAMI TOMONORI;MIZUTA HIROSHI;TAKAHASHI SUSUMU
分类号 G06G7/60;G06G7/163;G06N3/063;G11C11/54;G11C11/56;H01L21/331;H01L27/10;H01L29/73;H01L29/737;H03H11/52;H03K19/177 主分类号 G06G7/60
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