发明名称 |
MULTISTAGE VARIABLE CONDUCTANCE CIRCUIT, NEUROCHIP USING THE CIRCUIT, READ/WRITE METHOD FOR THE CHIP, AND SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE:To obtain a multistage variable conductance circuit which has a high reliability and is easy to integrate by connecting a variable conductance element to the connection point between a multidifferential negative resistance element and a load element in a series circuit consisting of them. CONSTITUTION:An FET 2 as the variable conductance element is connected to the connection point between a multidifferential negative resistance element 1 and a load resistance 3. Then, a multistage variable conductance circuit is constituted. That is, a multilevel stabilizing circuit consists of the element 1, and the conductance of the element 2 is controlled stepwise by its output. That is, the state which the conductance of the element 2 can take is limited to several discontinuous values. Thus, the reproducibility and the set precision of the output are improved. Integration is facilitated because the number of elements is smaller. |
申请公布号 |
JPH02113494(A) |
申请公布日期 |
1990.04.25 |
申请号 |
JP19880263892 |
申请日期 |
1988.10.21 |
申请人 |
HITACHI LTD |
发明人 |
TAGAMI TOMONORI;MIZUTA HIROSHI;TAKAHASHI SUSUMU |
分类号 |
G06G7/60;G06G7/163;G06N3/063;G11C11/54;G11C11/56;H01L21/331;H01L27/10;H01L29/73;H01L29/737;H03H11/52;H03K19/177 |
主分类号 |
G06G7/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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