发明名称 |
Tunable semiconductor laser |
摘要 |
A tunable multisection laser of the invention includes an active layer (C2) which is thicker in a phase tuning section (S3) and in a grating section (S2) including a Bragg distributed reflector (R) having a controllable equivalent pitch than it is in a light amplification section (S1). The invention is particularly applicable to making components for telecommunications by means of optical fibers.
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申请公布号 |
US4920542(A) |
申请公布日期 |
1990.04.24 |
申请号 |
US19890351893 |
申请日期 |
1989.03.22 |
申请人 |
ALCATEL N.V. |
发明人 |
BROSSON, PHILIPPE;JACQUET, JOEL;ARTIGUE, CLAUDE;LECLERC, DENIS;BENOIT, JACQUES |
分类号 |
H01S3/098;H01S5/00;H01S5/042;H01S5/0625;H01S5/10;H01S5/12 |
主分类号 |
H01S3/098 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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