| 摘要 |
PURPOSE:To secure a high contrast, a low distortion and a high dimensional accuracy in an X-ray mask by a method wherein an X-ray absorber layer pattern composed of a tungsten-silicon alloy containing 1 to 5 weight % of silicon against tungsten is used as a mask pattern. CONSTITUTION:An X-ray absorber layer pattern composed of a tungsten-silicon alloy containing 1 to 5 weight % of silicon against tungsten is constituted as a mask pattern. The reason why an addition ratio of Si is limited to a range of 1 to 5 weight % is as follows: when it is 1wt.% or lower, an amorphous property is not advanced so much and a mirror property cannot be secured sufficiently; when it is 5wt.% or higher, a density is lowered remarkably by a content of Si and the alloy is not suitable for an absorber. Thereby, it is possible to obtain an X-ray absorber material which can simultaneously satisfy a low stress, a high density and the mirror property; a high contrast, a low distortion and a high dimensional accuracy in an X-ray mask can be secured. |
