| 摘要 |
PURPOSE:To enable the manufacture of a semiconductor integrated circuit through a simple wiring process at a low coast by a method wherein base cells containing transistors are formed to be arranged in lattices, first and second wirings which cross each other at a right angle and are connected with each other at intersecting connection sections are formed, and the intersecting connection sections are selectively cut off to combine the base cells for the formation of a specified circuit. CONSTITUTION:Base cells 4 containing transistors 2 and 3 are formed to be arranged in lattices, and a circuit is formed using the base cells 4. In the manufacture of a semiconductor integrated circuit as mentioned above, first wirings 5 connected with the lead-out electrodes of the above base cells 4 are formed, and second wirings 6 which cross the first wirings 5 at a right angle and connected to them at intersecting connection sections 7 are formed. Thereafter, the above intersecting connection sections 7 are cut off to combine the base cells for the formation of a specified circuit. For instance, unneeded points (cutoff points shown by X marks in the figure) at the intersecting connection sections 7 are cut off for each of the base cells 4 through a laser device for the formation of a required two-input NOR circuit. |
