| 摘要 |
PURPOSE:To allow the formation of fine patterns with high resolution without impairing high sensitivity and dry etching resistance by exposing a resist formed of poly-p-hydroxy styrene by electron beams and removing the unexposed part by an alkali. CONSTITUTION:The resist layer formed of the poly-p-hydroxy styrene is exposed by the electron beams and the unexposed part is removed by the alkali and is developed. Since this poly-p-hydroxy styrene has an acidic -OH group, the unexposed part is dissolved away by an aq. alkaline soln. The hydrogen of a phenolic hydroxyl group is eluted in the exposed part by irradiating with the electron beams and radicals are generated to effect crosslinking in this part; therefore, the concn. of the hydroxyl group deceases and the swelling by a developer is suppressed. The exposed part is changed largely in polarity from the unexposed part in this way and a difference in solubility is generated between both. The negative patterns having the high resolution are obtd. without swelling and the fine patterns are formed with the high resolution without impairing the high sensitivity and dry etching resistance. |
